N-channel power MOSFET with 400V drain-to-source breakdown voltage and 170mA continuous drain current. Features 25 Ohm drain-to-source resistance, 1.6W power dissipation, and 15ns fall time. Operates from -55°C to 150°C, with a 20V gate-to-source voltage rating. Packaged in TO-243AA for surface mounting, supplied on tape and reel.
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Microchip DN2540N8-G technical specifications.
| Package/Case | TO-243AA |
| Continuous Drain Current (ID) | 170mA |
| Drain to Source Breakdown Voltage | 400V |
| Drain to Source Resistance | 25R |
| Fall Time | 15ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1.6mm |
| Input Capacitance | 300pF |
| Lead Free | Lead Free |
| Length | 4.6mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.6W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Package Quantity | 2000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 1.6W |
| Rds On Max | 25R |
| Turn-Off Delay Time | 15ns |
| Turn-On Delay Time | 10ns |
| Weight | 0.001862oz |
| Width | 2.6mm |
| RoHS | Compliant |
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