N-channel power MOSFET with 400V drain-to-source breakdown voltage and 170mA continuous drain current. Features 25 Ohm drain-to-source resistance, 1.6W power dissipation, and 15ns fall time. Operates from -55°C to 150°C, with a 20V gate-to-source voltage rating. Packaged in TO-243AA for surface mounting, supplied on tape and reel.
PackageTO-243AA
MountingSurface Mount
PolarityN-CHANNEL
Power1.6W
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Technical Specifications
Microchip DN2540N8-G technical specifications.
General
Package/Case
TO-243AA
Continuous Drain Current (ID)
170mA
Drain to Source Breakdown Voltage
400V
Drain to Source Resistance
25R
Fall Time
15ns
Gate to Source Voltage (Vgs)
20V
Height
1.6mm
Input Capacitance
300pF
Lead Free
Lead Free
Length
4.6mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
1.6W
Mount
Surface Mount
Number of Channels
1
Number of Elements
1
Package Quantity
2000
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
1.6W
Rds On Max
25R
Turn-Off Delay Time
15ns
Turn-On Delay Time
10ns
Weight
0.001862oz
Width
2.6mm
Compliance
RoHS
Compliant
Datasheet
Microchip DN2540N8-G Datasheet
Download the complete datasheet for Microchip DN2540N8-G to view detailed technical specifications.
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