N-channel JFET with 350V drain-source breakdown voltage and 135mA continuous drain current. Features 35 Ohm drain-source resistance (Rds On Max) and 1.3W power dissipation. Operates across a -55°C to 150°C temperature range. Packaged in a SOT-89 surface-mount case, this component offers fast switching with a 10ns turn-on delay and 15ns fall time.
PackageSOT-89
MountingSurface Mount
PolarityN-CHANNEL
Power1.3W
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Technical Specifications
Microchip DN3135N8-G technical specifications.
General
Package/Case
SOT-89
Continuous Drain Current (ID)
135mA
Drain to Source Breakdown Voltage
350V
Drain to Source Resistance
35R
Drain to Source Voltage (Vdss)
350V
Fall Time
15ns
Gate to Source Voltage (Vgs)
20V
Height
1.6mm
Input Capacitance
120pF
Lead Free
Lead Free
Length
4.6mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
1.3W
Mount
Surface Mount
Number of Channels
1
Number of Elements
1
Package Quantity
2000
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
1.3W
Rds On Max
35R
Reach SVHC Compliant
Unknown
RoHS Compliant
Yes
Turn-Off Delay Time
15ns
Turn-On Delay Time
10ns
Weight
0.001862oz
Width
2.6mm
Compliance
RoHS
Compliant
Datasheet
Microchip DN3135N8-G Datasheet
Download the complete datasheet for Microchip DN3135N8-G to view detailed technical specifications.
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