N-Channel Power MOSFET, SOT-89 package, offering 350V drain-to-source breakdown voltage and 230mA continuous drain current. Features 10 Ohm drain-to-source resistance (Rds On Max) and 1.6W maximum power dissipation. Designed for surface mounting with a compact 4.6mm length, 2.6mm width, and 1.6mm height. Includes fast switching characteristics with a 15ns turn-on delay and 20ns fall time. RoHS compliant and lead-free.
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Microchip DN3535N8-G technical specifications.
| Package/Case | SOT-89 |
| Continuous Drain Current (ID) | 230mA |
| Drain to Source Breakdown Voltage | 350V |
| Drain to Source Resistance | 10R |
| Drain to Source Voltage (Vdss) | 350V |
| Fall Time | 20ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1.6mm |
| Input Capacitance | 360pF |
| Lead Free | Lead Free |
| Length | 4.6mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.6W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Package Quantity | 2000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 1.6W |
| Radiation Hardening | No |
| Rds On Max | 10R |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 20ns |
| Turn-On Delay Time | 15ns |
| Weight | 0.001862oz |
| Width | 2.6mm |
| RoHS | Compliant |
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