N-channel JFET with 450V drain-source breakdown voltage and 136mA continuous drain current. Features 20 Ohm drain-source resistance, 30ns fall time, and 20ns turn-on delay. Operates from -55°C to 150°C with a maximum power dissipation of 740mW. Packaged in a TO-92 through-hole mount.
PackageTO-92
MountingThrough Hole
PolarityN-CHANNEL
Power740mW
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Technical Specifications
Microchip DN3545N3-G technical specifications.
General
Package/Case
TO-92
Continuous Drain Current (ID)
136mA
Drain to Source Breakdown Voltage
450V
Drain to Source Resistance
20R
Drain to Source Voltage (Vdss)
450V
Fall Time
30ns
Gate to Source Voltage (Vgs)
20V
Height
5.33mm
Input Capacitance
360pF
Lead Free
Lead Free
Length
5.21mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
740mW
Mount
Through Hole
Number of Channels
1
Number of Elements
1
Package Quantity
1000
Packaging
Bulk
Polarity
N-CHANNEL
Power Dissipation
740mW
Rds On Max
20R
Reach SVHC Compliant
Unknown
Turn-Off Delay Time
30ns
Turn-On Delay Time
20ns
Weight
0.016oz
Width
4.19mm
Compliance
RoHS
Compliant
Datasheet
Microchip DN3545N3-G Datasheet
Download the complete datasheet for Microchip DN3545N3-G to view detailed technical specifications.
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