
N-channel JFET with 450V drain-source breakdown voltage and 136mA continuous drain current. Features 20 Ohm drain-source resistance, 30ns fall time, and 20ns turn-on delay. Operates from -55°C to 150°C with a maximum power dissipation of 740mW. Packaged in a TO-92 through-hole mount.
Microchip DN3545N3-G technical specifications.
| Package/Case | TO-92 |
| Continuous Drain Current (ID) | 136mA |
| Drain to Source Breakdown Voltage | 450V |
| Drain to Source Resistance | 20R |
| Drain to Source Voltage (Vdss) | 450V |
| Fall Time | 30ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 5.33mm |
| Input Capacitance | 360pF |
| Lead Free | Lead Free |
| Length | 5.21mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 740mW |
| Mount | Through Hole |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Package Quantity | 1000 |
| Packaging | Bulk |
| Polarity | N-CHANNEL |
| Power Dissipation | 740mW |
| Rds On Max | 20R |
| Reach SVHC Compliant | Unknown |
| Turn-Off Delay Time | 30ns |
| Turn-On Delay Time | 20ns |
| Weight | 0.016oz |
| Width | 4.19mm |
| RoHS | Compliant |
Download the complete datasheet for Microchip DN3545N3-G to view detailed technical specifications.
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