N-channel power MOSFET featuring 650V drain-source breakdown voltage and 300mA continuous drain current. This surface-mount component offers 8Ω drain-source resistance and a maximum power dissipation of 2.5W. Designed for demanding applications, it operates within a temperature range of -55°C to 150°C and is packaged in a TO-252 case. Key switching characteristics include a 50ns turn-on delay and 75ns turn-off delay.
Sign in to ask questions about the Microchip DN3765K4-G datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
Microchip DN3765K4-G technical specifications.
| Package/Case | TO-252 |
| Continuous Drain Current (ID) | 300mA |
| Drain to Source Breakdown Voltage | 650V |
| Drain to Source Resistance | 8R |
| Drain to Source Voltage (Vdss) | 650V |
| Fall Time | 100ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 2.39mm |
| Input Capacitance | 825pF |
| Lead Free | Lead Free |
| Length | 6.73mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2.5W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Package Quantity | 2000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 2.5W |
| Rds On Max | 8R |
| Reach SVHC Compliant | Unknown |
| Turn-Off Delay Time | 75ns |
| Turn-On Delay Time | 50ns |
| Weight | 0.139332oz |
| Width | 6.1mm |
| RoHS | Compliant |
Download the complete datasheet for Microchip DN3765K4-G to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
