N-channel enhancement mode power MOSFET featuring 400V drain-source voltage and 14A continuous drain current. This single-element transistor is housed in a TO-3 (TO-204-AA) metal package with a through-hole mounting configuration. Key specifications include a maximum gate-source voltage of ±20V, a maximum gate threshold voltage of 4V, and a low drain-source on-resistance of 400mΩ at 10V. Operating temperature range spans from -55°C to 150°C, with a maximum power dissipation of 4000mW.
PackageTO-3
MountingThrough Hole
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Technical Specifications
Microchip JAN2N6768 technical specifications.
General
Basic Package Type
Through Hole
Package Family Name
TO-204-AA
Package/Case
TO-3
Package Description
Transistor Outline Package
Lead Shape
Through Hole
Pin Count
3
PCB
2
Tab
Tab
Package Length (mm)
39.29
Package Width (mm)
26.42
Package Height (mm)
7.92
Package Material
Metal
Mounting
Through Hole
Configuration
Single
Category
Power MOSFET
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
1
Maximum Drain Source Voltage
400V
Maximum Gate Source Voltage
±20V
Maximum Continuous Drain Current
14A
Maximum Gate Threshold Voltage
4V
Maximum Drain Source Resistance
400@10VmOhm
Typical Gate Charge @ Vgs
110(Max)@10VnC
Typical Gate Charge @ 10V
110(Max)nC
Maximum Power Dissipation
4000mW
Min Operating Temperature
-55°C
Max Operating Temperature
150°C
Compliance
Cage Code
60991
EU RoHS
No
HTS Code
8541290095
Schedule B
8541290080
ECCN
EAR99
Automotive
No
AEC Qualified
No
PPAP
No
Radiation Hardening
No
RoHS Versions
2011/65/EU, 2015/863
Datasheet
Microchip JAN2N6768 Datasheet
Download the complete datasheet for Microchip JAN2N6768 to view detailed technical specifications.
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