N-channel enhancement mode power MOSFET featuring 400V drain-source voltage and 14A continuous drain current. This single-element transistor is housed in a TO-3 (TO-204-AA) metal package with a through-hole mounting configuration. Key specifications include a maximum gate-source voltage of ±20V, a maximum gate threshold voltage of 4V, and a low drain-source on-resistance of 400mΩ at 10V. Operating temperature range spans from -55°C to 150°C, with a maximum power dissipation of 4000mW.
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| Basic Package Type | Through Hole |
| Package Family Name | TO-204-AA |
| Package/Case | TO-3 |
| Package Description | Transistor Outline Package |
| Lead Shape | Through Hole |
| Pin Count | 3 |
| PCB | 2 |
| Tab | Tab |
| Package Length (mm) | 39.29 |
| Package Width (mm) | 26.42 |
| Package Height (mm) | 7.92 |
| Package Material | Metal |
| Mounting | Through Hole |
| Configuration | Single |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 400V |
| Maximum Gate Source Voltage | ±20V |
| Maximum Continuous Drain Current | 14A |
| Maximum Gate Threshold Voltage | 4V |
| Maximum Drain Source Resistance | 400@10VmOhm |
| Typical Gate Charge @ Vgs | 110(Max)@10VnC |
| Typical Gate Charge @ 10V | 110(Max)nC |
| Maximum Power Dissipation | 4000mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
| Cage Code | 60991 |
| EU RoHS | No |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
| RoHS Versions | 2011/65/EU, 2015/863 |
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