N-channel enhancement mode power MOSFET, 400V drain-source voltage, 14A continuous drain current. Features a 3-pin TO-254 package with through-hole mounting and a tab. Operates from -55°C to 150°C with a maximum power dissipation of 4000mW. Gate-source voltage is ±20V, with a gate threshold voltage of 4V.
Checking distributor stock and pricing after the page loads.
Sign in to ask questions about the Microchip JAN2N6768T1 datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
| Basic Package Type | Through Hole |
| Package Family Name | TO-254-AA |
| Package/Case | TO-254 |
| Package Description | Transistor Outline Package |
| Pin Count | 3 |
| PCB | 3 |
| Tab | Tab |
| Package Length (mm) | 13.72 |
| Package Width (mm) | 6.6 |
| Package Height (mm) | 20.19(Max) - 6.48 |
| Mounting | Through Hole |
| Configuration | Single |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 400V |
| Maximum Gate Source Voltage | ±20V |
| Maximum Continuous Drain Current | 14A |
| Maximum Gate Threshold Voltage | 4V |
| Maximum Drain Source Resistance | 400@10VmOhm |
| Typical Gate Charge @ Vgs | 110(Max)@10VnC |
| Typical Gate Charge @ 10V | 110(Max)nC |
| Maximum Power Dissipation | 4000mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
| Cage Code | 60991 |
| EU RoHS | No |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
| RoHS Versions | 2011/65/EU, 2015/863 |
Download the complete datasheet for Microchip JAN2N6768T1 to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
