N-channel enhancement mode power MOSFET, 400V drain-source voltage, 14A continuous drain current. Features a 3-pin TO-254 package with through-hole mounting and a tab. Operates from -55°C to 150°C with a maximum power dissipation of 4000mW. Gate-source voltage is ±20V, with a gate threshold voltage of 4V.
PackageTO-254
MountingThrough Hole
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Technical Specifications
Microchip JAN2N6768T1 technical specifications.
General
Basic Package Type
Through Hole
Package Family Name
TO-254-AA
Package/Case
TO-254
Package Description
Transistor Outline Package
Pin Count
3
PCB
3
Tab
Tab
Package Length (mm)
13.72
Package Width (mm)
6.6
Package Height (mm)
20.19(Max) - 6.48
Mounting
Through Hole
Configuration
Single
Category
Power MOSFET
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
1
Maximum Drain Source Voltage
400V
Maximum Gate Source Voltage
±20V
Maximum Continuous Drain Current
14A
Maximum Gate Threshold Voltage
4V
Maximum Drain Source Resistance
400@10VmOhm
Typical Gate Charge @ Vgs
110(Max)@10VnC
Typical Gate Charge @ 10V
110(Max)nC
Maximum Power Dissipation
4000mW
Min Operating Temperature
-55°C
Max Operating Temperature
150°C
Compliance
Cage Code
60991
EU RoHS
No
HTS Code
8541290095
Schedule B
8541290080
ECCN
EAR99
Automotive
No
AEC Qualified
No
PPAP
No
Radiation Hardening
No
RoHS Versions
2011/65/EU, 2015/863
Datasheet
Microchip JAN2N6768T1 Datasheet
Download the complete datasheet for Microchip JAN2N6768T1 to view detailed technical specifications.
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