N-channel enhancement mode power MOSFET, 400V drain-source voltage, 14A continuous drain current. Features a 3-pin TO-254 package with through-hole mounting and a tab. Operates from -55°C to 150°C with a maximum power dissipation of 4000mW. Gate-source voltage is ±20V, with a gate threshold voltage of 4V.
Microchip JAN2N6768T1 technical specifications.
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