PNP Bipolar Junction Transistor (BJT) for through-hole mounting. Features a 60V maximum collector-emitter voltage and 0.6A maximum DC collector current. This single-element silicon transistor offers 500mW maximum power dissipation and a minimum DC current gain of 40 across various current levels. Encased in a 3-pin TO-18 metal package with a maximum height of 5.33mm and diameter of 5.84mm, it operates from -65°C to 200°C.
PackageTO-18
MountingThrough Hole
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Technical Specifications
Microchip JANSD2N2906AL technical specifications.
General
| Basic Package Type | Through Hole |
| Package Family Name | TO-206-AA |
| Package/Case | TO-18 |
| Package Description | Transistor Outline Package |
| Lead Shape | Through Hole |
| Pin Count | 3 |
| PCB | 3 |
| Package Height (mm) | 5.33(Max) |
| Package Diameter (mm) | 5.84(Max) |
| Package Material | Metal |
| Mounting | Through Hole |
| Type | PNP |
| Configuration | Single |
| Number of Elements per Chip | 1 |
| Maximum Collector Base Voltage | 60V |
| Maximum Emitter Base Voltage | 5V |
| Maximum Collector-Emitter Voltage | 60V |
| Maximum DC Collector Current | 0.6A |
| Maximum Power Dissipation | 500mW |
| Material | Si |
| Minimum DC Current Gain | [email protected]@10V|40@1mA@10V|40@10mA@10V|40@150mA@10V|40@500mA@10V |
| Category | Bipolar Power |
| Min Operating Temperature | -65°C |
| Max Operating Temperature | 200°C |
Compliance
| Cage Code | 60991 |
| EU RoHS | No |
| Schedule B | 8541210080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | Yes |
| Dose Level | 10 |
| RoHS Versions | 2011/65/EU, 2015/863 |
Datasheet
Microchip JANSD2N2906AL Datasheet
Download the complete datasheet for Microchip JANSD2N2906AL to view detailed technical specifications.
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