PNP Bipolar Junction Transistor (BJT) for general-purpose applications. Features a maximum collector-emitter voltage of 60V and a maximum DC collector current of 0.6A. This single-element transistor offers a maximum power dissipation of 500mW and is housed in a 3-pin TO-18 metal package with through-hole mounting. Operating temperature range is -65°C to 200°C.
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| Basic Package Type | Through Hole |
| Package Family Name | TO-206-AA |
| Package/Case | TO-18 |
| Package Description | Transistor Outline Package |
| Lead Shape | Through Hole |
| Pin Count | 3 |
| PCB | 3 |
| Package Height (mm) | 5.33(Max) |
| Package Diameter (mm) | 5.84(Max) |
| Package Material | Metal |
| Mounting | Through Hole |
| Type | PNP |
| Configuration | Single |
| Number of Elements per Chip | 1 |
| Maximum Collector Base Voltage | 60V |
| Maximum Emitter Base Voltage | 5V |
| Maximum Collector-Emitter Voltage | 60V |
| Maximum DC Collector Current | 0.6A |
| Maximum Power Dissipation | 500mW |
| Material | Si |
| Minimum DC Current Gain | [email protected]@10V|100@1mA@10V|100@10mA@10V|100@150mA@10V|50@500mA@10V |
| Category | Bipolar Power |
| Min Operating Temperature | -65°C |
| Max Operating Temperature | 200°C |
| Cage Code | 60991 |
| EU RoHS | No |
| Schedule B | 8541210080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | Yes |
| Dose Level | 3 |
| RoHS Versions | 2011/65/EU, 2015/863 |
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