N-channel Power MOSFET with 200V drain-source voltage and 5.5A continuous drain current. Features a 3-pin TO-39 metal package for through-hole mounting, offering a maximum power dissipation of 25000mW. Operates across a wide temperature range from -55°C to 150°C, with a maximum drain-source on-resistance of 364mΩ at 12V.
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| Basic Package Type | Through Hole |
| Package Family Name | TO-205-AF |
| Package/Case | TO-39 |
| Package Description | Transistor Outline Package |
| Lead Shape | Through Hole |
| Pin Count | 3 |
| PCB | 3 |
| Package Height (mm) | 6.6(Max) |
| Package Diameter (mm) | 9.4(Max) |
| Package Material | Metal |
| Mounting | Through Hole |
| Configuration | Single |
| Category | Power MOSFET |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 200V |
| Maximum Gate Source Voltage | ±20V |
| Maximum Continuous Drain Current | 5.5A |
| Maximum Gate Threshold Voltage | 4V |
| Maximum Drain Source Resistance | 364@12VmOhm |
| Typical Gate Charge @ Vgs | 50(Max)@12VnC |
| Maximum Power Dissipation | 25000mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
| Cage Code | 60991 |
| EU RoHS | No |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | Yes |
| Dose Level | 100 |
| RoHS Versions | 2011/65/EU, 2015/863 |
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