N-channel Junction Field-Effect Transistor (JFET) designed for small signal applications. Features a 500V drain-to-source breakdown voltage and a continuous drain current of 30mA. Offers a low drain-to-source resistance of 850 Ohms and a maximum power dissipation of 1.6W. Packaged in a SOT-89-3 surface-mount configuration, this component operates within a temperature range of -55°C to 150°C. Includes fast switching characteristics with turn-on delay time of 90ns and fall time of 450ns.
PackageSOT-89-3
MountingSurface Mount
PolarityN-CHANNEL
Power1.2W
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Technical Specifications
Microchip LND150N8-G technical specifications.
General
Package/Case
SOT-89-3
Continuous Drain Current (ID)
30mA
Drain to Source Breakdown Voltage
500V
Drain to Source Resistance
850R
Drain to Source Voltage (Vdss)
500V
Fall Time
450ns
Gate to Source Voltage (Vgs)
20V
Height
1.6mm
Input Capacitance
10pF
Lead Free
Lead Free
Length
4.6mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
1.6W
Mount
Surface Mount
Number of Channels
1
Number of Elements
1
Package Quantity
2000
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
1.2W
Radiation Hardening
No
Rds On Max
1kR
Reach SVHC Compliant
Unknown
Turn-Off Delay Time
100ns
Turn-On Delay Time
90ns
Weight
0.001862oz
Width
2.6mm
Compliance
RoHS
Compliant
Datasheet
Microchip LND150N8-G Datasheet
Download the complete datasheet for Microchip LND150N8-G to view detailed technical specifications.
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