MCP87018T-U/MF

N-channel power MOSFET optimized for high-speed power conversion in point-of-load DC-DC converters and power-management circuits. It supports 25 V drain-to-source voltage, 100 A continuous drain current at 25°C case temperature, and up to 1.9 mΩ maximum on-resistance at 10 V gate drive. The device is housed in an 8-lead 5 mm x 6 mm PDFN package and operates from -55°C to +150°C junction temperature. Low total gate charge, low gate-to-drain charge, and low series gate resistance support fast switching and short dead-time operation. Avalanche energy is rated to 200 mJ and junction-to-case thermal resistance is 1.0 °C/W.