P-channel MOSFET, ideal for small signal applications, features a 6V drain-source voltage (Vdss) and a continuous drain current (ID) of 2A. This surface-mount device offers a maximum drain-source on-resistance (Rds On) of 84mR and a gate-source voltage (Vgs) of 6V. Operating within a temperature range of -40°C to 150°C, it has a power dissipation of 270mW and is supplied in tape and reel packaging.
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| Package/Case | SC |
| Continuous Drain Current (ID) | 2A |
| Current Rating | -2A |
| Drain to Source Voltage (Vdss) | 6V |
| Drain-source On Resistance-Max | 84MR |
| Gate to Source Voltage (Vgs) | 6V |
| Height | 1mm |
| Lead Free | Lead Free |
| Length | 2.2mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -40°C |
| Max Power Dissipation | 270mW |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Packaging | Tape and Reel |
| Power Dissipation | 270mW |
| Radiation Hardening | No |
| Rds On Max | 84mR |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 60ns |
| Turn-On Delay Time | 15ns |
| DC Rated Voltage | -6V |
| Width | 1.35mm |
| RoHS | Compliant |
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