This bidirectional transient voltage suppressor diode features a breakdown voltage of 11.1V to 12.3V and a maximum power dissipation of 2.5W. The diode element is made of silicon and has a maximum reverse voltage of 10V. It is available in a 1-pin R-PSSO-G1 package and is suitable for use in a variety of applications.
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Microchip MPLAD15KP10CAE3 technical specifications.
| Number of Terminals | 1 |
| Terminal Position | SINGLE |
| Number of Elements | 1 |
| Polarity | BIDIRECTIONAL |
| Diode Element Material | SILICON |
| Diode Type | TRANS VOLTAGE SUPPRESSOR DIODE |
| Rep Pk Reverse Voltage-Max | 10 |
| Breakdown Voltage-Min | 11.1 |
| Non-rep Peak Rev Power Dis-Max | 15000 |
| Clamping Voltage-Max | 17 |
| Breakdown Voltage-Nom | 11.7 |
| Breakdown Voltage-Max | 12.3 |
| Power Dissipation-Max | 2.5 |
| RoHS | Yes |
| REACH | Compliant |
| Military Spec | True |
