RF Transistor, NPN, Single Dual Emitter silicon BJT with a maximum collector-emitter voltage of 20V and a maximum DC collector current of 0.3A. Features a 4-pin Style M220 package, screw mounting, and a maximum power dissipation of 5000mW. Offers a minimum DC current gain of 15 at 0.1A/5V and a typical power gain of 12.3 dB. Operates across a wide temperature range from -65°C to 200°C.
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| Package/Case | Style M220 |
| Pin Count | 4 |
| PCB | 4 |
| Package Length (mm) | 20.32 |
| Package Width (mm) | 7.24(Max) |
| Package Height (mm) | 5.33(Max) |
| Seated Plane Height (mm) | 5.33(Max) |
| Mounting | Screw |
| Material | Si |
| Type | NPN |
| Configuration | Single Dual Emitter |
| Number of Elements per Chip | 1 |
| Maximum Collector-Emitter Voltage | 20V |
| Maximum Collector Base Voltage | 50V |
| Maximum Emitter Base Voltage | 3.5V |
| Maximum DC Collector Current | 0.3A |
| Maximum Power Dissipation | 5000mW |
| Maximum Junction Case Thermal Resistance | 35°C/W |
| Minimum DC Current Gain | [email protected]@5V |
| Minimum DC Current Gain Range | 2 to 30 |
| Min Operating Temperature | -65°C |
| Max Operating Temperature | 200°C |
| Output Power | 0.85(Typ)W |
| Typical Power Gain | 12.3dB |
| Cage Code | 60991 |
| EU RoHS | Yes |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
| RoHS Versions | 2011/65/EU |
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