RF Transistor, NPN, Single Dual Emitter silicon BJT with a maximum collector-emitter voltage of 20V and a maximum DC collector current of 0.3A. Features a 4-pin Style M220 package, screw mounting, and a maximum power dissipation of 5000mW. Offers a minimum DC current gain of 15 at 0.1A/5V and a typical power gain of 12.3 dB. Operates across a wide temperature range from -65°C to 200°C.
PackageStyle M220
MountingScrew
Power0.85(Typ)W
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Technical Specifications
Microchip MS2203 technical specifications.
General
Package/Case
Style M220
Pin Count
4
PCB
4
Package Length (mm)
20.32
Package Width (mm)
7.24(Max)
Package Height (mm)
5.33(Max)
Seated Plane Height (mm)
5.33(Max)
Mounting
Screw
Material
Si
Type
NPN
Configuration
Single Dual Emitter
Number of Elements per Chip
1
Maximum Collector-Emitter Voltage
20V
Maximum Collector Base Voltage
50V
Maximum Emitter Base Voltage
3.5V
Maximum DC Collector Current
0.3A
Maximum Power Dissipation
5000mW
Maximum Junction Case Thermal Resistance
35°C/W
Minimum DC Current Gain
Minimum DC Current Gain Range
2 to 30
Min Operating Temperature
-65°C
Max Operating Temperature
200°C
Output Power
0.85(Typ)W
Typical Power Gain
12.3dB
Compliance
Cage Code
60991
EU RoHS
Yes
ECCN
EAR99
Automotive
No
AEC Qualified
No
PPAP
No
Radiation Hardening
No
RoHS Versions
2011/65/EU
Datasheet
Microchip MS2203 Datasheet
Download the complete datasheet for Microchip MS2203 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.