Power Field-Effect Transistor, 254A I(D), 1200V, 0.0104ohm, 2-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET
Microchip MSCSM120AM11CT3AG technical specifications.
| Max Operating Temperature | 175 |
| Number of Terminals | 25 |
| Min Operating Temperature | -40 |
| Terminal Position | UPPER |
| Number of Elements | 2 |
| REACH | Compliant |
| Military Spec | False |
No datasheet is available for this part.
