Power Field-Effect Transistor, 254A I(D), 1200V, 0.0104ohm, 1-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET
Microchip MSCSM120DAM11CT3AG technical specifications.
| RoHS | Yes |
| REACH | Compliant |
| Military Spec | False |
No datasheet is available for this part.
