This silicon transient voltage suppressor diode features a breakdown voltage of 199V and a maximum power dissipation of 2.5W. It has a maximum reverse voltage of 170V and a maximum non-repetitive peak reverse power dissipation of 15000W. The diode is unidirectional and has a clamping voltage of 275V. It is available in a 1-pin R-PSSO-G1 package.
Microchip MXLPLAD15KP170AE3 technical specifications.
| Number of Terminals | 1 |
| Terminal Position | SINGLE |
| Number of Elements | 1 |
| Polarity | UNIDIRECTIONAL |
| Diode Element Material | SILICON |
| Diode Type | TRANS VOLTAGE SUPPRESSOR DIODE |
| Rep Pk Reverse Voltage-Max | 170 |
| Breakdown Voltage-Min | 189 |
| Non-rep Peak Rev Power Dis-Max | 15000 |
| Clamping Voltage-Max | 275 |
| Breakdown Voltage-Nom | 199 |
| Breakdown Voltage-Max | 209 |
| Power Dissipation-Max | 2.5 |
| RoHS | Yes |
| REACH | Compliant |
| Military Spec | True |
No datasheet is available for this part.
