This silicon bidirectional transient voltage suppressor diode features a maximum reverse voltage of 36V and a maximum non-repetitive peak reverse power dissipation of 15000W. The device has a maximum power dissipation of 2.5W and a nominal breakdown voltage of 42.1V. It is available in the R-PSSO-G1 package type. The operating temperature range is not specified in the provided data.
Microchip MXLPLAD15KP36CAE3 technical specifications.
| Number of Terminals | 1 |
| Terminal Position | SINGLE |
| Number of Elements | 1 |
| Polarity | BIDIRECTIONAL |
| Diode Element Material | SILICON |
| Diode Type | TRANS VOLTAGE SUPPRESSOR DIODE |
| Rep Pk Reverse Voltage-Max | 36 |
| Breakdown Voltage-Min | 40 |
| Non-rep Peak Rev Power Dis-Max | 15000 |
| Clamping Voltage-Max | 58.1 |
| Breakdown Voltage-Nom | 42.1 |
| Breakdown Voltage-Max | 44.2 |
| Power Dissipation-Max | 2.5 |
| RoHS | Yes |
| REACH | Compliant |
| Military Spec | True |
No datasheet is available for this part.
