The MXLPLAD30KP18AE3 is a single-element, unidirectional transient voltage suppressor diode with a maximum reverse voltage of 18V and a maximum non-repetitive peak reverse power dissipation of 30kW. It features a SILICON diode element material and a maximum clamping voltage of 30.8V. The device is packaged in a R-PSSO-G1 package type and is suitable for use in applications requiring transient voltage suppression.
PolarityUNIDIRECTIONAL
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Technical Specifications
Microchip MXLPLAD30KP18AE3 technical specifications.
General
| Number of Terminals | 1 |
| Terminal Position | SINGLE |
| Number of Elements | 1 |
| Polarity | UNIDIRECTIONAL |
| Diode Element Material | SILICON |
| Diode Type | TRANS VOLTAGE SUPPRESSOR DIODE |
| Rep Pk Reverse Voltage-Max | 18 |
| Breakdown Voltage-Min | 20 |
| Non-rep Peak Rev Power Dis-Max | 30000 |
| Clamping Voltage-Max | 30.8 |
| Breakdown Voltage-Nom | 21.05 |
| Breakdown Voltage-Max | 22.1 |
| Power Dissipation-Max | 2.5 |
Compliance
| RoHS | Yes |
| REACH | Compliant |
| Military Spec | False |
Datasheet
Microchip MXLPLAD30KP18AE3 Datasheet
Download the complete datasheet for Microchip MXLPLAD30KP18AE3 to view detailed technical specifications.
No datasheet is available for this part.