This bidirectional transient voltage suppressor diode features a silicon element with a maximum reverse voltage of 220V and a minimum breakdown voltage of 245V. The device can handle a maximum non-repetitive peak reverse power dissipation of 30kW and a maximum clamping voltage of 356V. The diode is constructed with a power dissipation maximum of 2.5W and is available in a R-PSSO-G1 package type.
PolarityBIDIRECTIONAL
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Technical Specifications
Microchip MXLPLAD30KP220CAE3 technical specifications.
General
| Number of Terminals | 1 |
| Terminal Position | SINGLE |
| Number of Elements | 1 |
| Polarity | BIDIRECTIONAL |
| Diode Element Material | SILICON |
| Diode Type | TRANS VOLTAGE SUPPRESSOR DIODE |
| Rep Pk Reverse Voltage-Max | 220 |
| Breakdown Voltage-Min | 245 |
| Non-rep Peak Rev Power Dis-Max | 30000 |
| Clamping Voltage-Max | 356 |
| Breakdown Voltage-Nom | 258 |
| Breakdown Voltage-Max | 271 |
| Power Dissipation-Max | 2.5 |
Compliance
| RoHS | Yes |
| REACH | Compliant |
| Military Spec | False |
Datasheet
Microchip MXLPLAD30KP220CAE3 Datasheet
Download the complete datasheet for Microchip MXLPLAD30KP220CAE3 to view detailed technical specifications.
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