This is a single-element, bidirectional transient voltage suppressor diode with a maximum reverse voltage of 28V and a minimum breakdown voltage of 31.1V. The non-repetitive peak reverse power dissipation is 30kW and the clamping voltage is 46.4V. The diode element is made of silicon and has a maximum power dissipation of 2.5W. It is available in a R-PSSO-G1 package type.
PolarityBIDIRECTIONAL
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Technical Specifications
Microchip MXLPLAD30KP28CAE3 technical specifications.
General
| Number of Terminals | 1 |
| Terminal Position | SINGLE |
| Number of Elements | 1 |
| Polarity | BIDIRECTIONAL |
| Diode Element Material | SILICON |
| Diode Type | TRANS VOLTAGE SUPPRESSOR DIODE |
| Rep Pk Reverse Voltage-Max | 28 |
| Breakdown Voltage-Min | 31.1 |
| Non-rep Peak Rev Power Dis-Max | 30000 |
| Clamping Voltage-Max | 46.4 |
| Breakdown Voltage-Nom | 32.75 |
| Breakdown Voltage-Max | 34.4 |
| Power Dissipation-Max | 2.5 |
Compliance
| RoHS | Yes |
| REACH | Compliant |
| Military Spec | False |
Datasheet
No datasheet is available for this part.