This silicon transient voltage suppressor diode features a maximum reverse voltage of 30V, minimum breakdown voltage of 33.3V, and maximum non-repetitive peak reverse power dissipation of 30kW. The clamping voltage is maximally 48.8V, with a nominal breakdown voltage of 35.05V and a maximum breakdown voltage of 36.8V. The device has a maximum power dissipation of 2.5W and is packaged in the R-PSSO-G1 package type.
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Microchip MXLPLAD30KP30AE3 technical specifications.
| Number of Terminals | 1 |
| Terminal Position | SINGLE |
| Number of Elements | 1 |
| Polarity | UNIDIRECTIONAL |
| Diode Element Material | SILICON |
| Diode Type | TRANS VOLTAGE SUPPRESSOR DIODE |
| Rep Pk Reverse Voltage-Max | 30 |
| Breakdown Voltage-Min | 33.3 |
| Non-rep Peak Rev Power Dis-Max | 30000 |
| Clamping Voltage-Max | 48.8 |
| Breakdown Voltage-Nom | 35.05 |
| Breakdown Voltage-Max | 36.8 |
| Power Dissipation-Max | 2.5 |
| RoHS | Yes |
| REACH | Compliant |
| Military Spec | False |
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