This transient voltage suppressor diode features a SILICON diode element material and a BIDIRECTIONAL polarity. It has a maximum reverse voltage of 400V and a maximum non-repetitive peak reverse power dissipation of 30kW. The device is packaged in a R-PSSO-G1 package type and is suitable for use in applications requiring transient voltage suppression.
Microchip MXLPLAD30KP400CAE3 technical specifications.
| Number of Terminals | 1 |
| Terminal Position | SINGLE |
| Number of Elements | 1 |
| Polarity | BIDIRECTIONAL |
| Diode Element Material | SILICON |
| Diode Type | TRANS VOLTAGE SUPPRESSOR DIODE |
| Rep Pk Reverse Voltage-Max | 400 |
| Breakdown Voltage-Min | 444 |
| Non-rep Peak Rev Power Dis-Max | 30000 |
| Clamping Voltage-Max | 644 |
| Breakdown Voltage-Nom | 468 |
| Breakdown Voltage-Max | 492 |
| Power Dissipation-Max | 2.5 |
| RoHS | Yes |
| REACH | Compliant |
| Military Spec | False |
No datasheet is available for this part.
