This silicon transient voltage suppressor diode features a breakdown voltage of 56.7V and a maximum reverse power dissipation of 30kW. The device has a clamping voltage of 82.4V and a maximum power dissipation of 2.5W. It is available in a R-PSSO-G1 package type, suitable for surface mount applications.
Microchip MXLPLAD30KP51AE3 technical specifications.
| Number of Terminals | 1 |
| Terminal Position | SINGLE |
| Number of Elements | 1 |
| Polarity | UNIDIRECTIONAL |
| Diode Element Material | SILICON |
| Diode Type | TRANS VOLTAGE SUPPRESSOR DIODE |
| Rep Pk Reverse Voltage-Max | 51 |
| Breakdown Voltage-Min | 56.7 |
| Non-rep Peak Rev Power Dis-Max | 30000 |
| Clamping Voltage-Max | 82.4 |
| Breakdown Voltage-Nom | 59.7 |
| Breakdown Voltage-Max | 62.7 |
| Power Dissipation-Max | 2.5 |
| RoHS | Yes |
| REACH | Compliant |
| Military Spec | False |
No datasheet is available for this part.
