This silicon bidirectional TVS diode features a maximum reverse voltage of 90V, minimum breakdown voltage of 100V, and maximum non-repetitive peak reverse power dissipation of 30kW. The clamping voltage is maximally 146V, with a nominal breakdown voltage of 105.5V and a maximum breakdown voltage of 111V. The device has a maximum power dissipation of 2.5W and is packaged in the R-PSSO-G1 type.
Microchip MXLPLAD30KP90CAE3 technical specifications.
| Number of Terminals | 1 |
| Terminal Position | SINGLE |
| Number of Elements | 1 |
| Polarity | BIDIRECTIONAL |
| Diode Element Material | SILICON |
| Diode Type | TRANS VOLTAGE SUPPRESSOR DIODE |
| Rep Pk Reverse Voltage-Max | 90 |
| Breakdown Voltage-Min | 100 |
| Non-rep Peak Rev Power Dis-Max | 30000 |
| Clamping Voltage-Max | 146 |
| Breakdown Voltage-Nom | 105.5 |
| Breakdown Voltage-Max | 111 |
| Power Dissipation-Max | 2.5 |
| RoHS | Yes |
| REACH | Compliant |
| Military Spec | False |
No datasheet is available for this part.
