Dual-channel N-channel and P-channel power MOSFET with 500V drain-to-source breakdown voltage and 60 Ohm Rds(on) max. Features 16A continuous drain current, 10ns turn-on delay, and 10ns fall time. Surface mountable in a SOIC package, operating from -55°C to 150°C.
Microchip TC1550TG-G technical specifications.
Download the complete datasheet for Microchip TC1550TG-G to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.