Dual-channel N-channel and P-channel power MOSFET with 500V drain-to-source breakdown voltage and 60 Ohm Rds(on) max. Features 16A continuous drain current, 10ns turn-on delay, and 10ns fall time. Surface mountable in a SOIC package, operating from -55°C to 150°C.
PackageSOIC
MountingSurface Mount
PolarityP-CHANNEL, N-CHANNEL
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Technical Specifications
Microchip TC1550TG-G technical specifications.
General
Package/Case
SOIC
Continuous Drain Current (ID)
16A
Drain to Source Breakdown Voltage
500V
Drain to Source Resistance
125R
Drain to Source Voltage (Vdss)
500V
Fall Time
10ns
FET Type
N and P-Channel
Gate to Source Voltage (Vgs)
20V
Height
1.65mm
Input Capacitance
55pF
Length
4.9mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Mount
Surface Mount
Number of Channels
2
Package Quantity
3300
Packaging
Tape and Reel
Polarity
P-CHANNEL, N-CHANNEL
Rds On Max
60R
Turn-Off Delay Time
15ns
Turn-On Delay Time
10ns
Weight
0.002998oz
Width
3.9mm
Compliance
RoHS
Compliant
Datasheet
Microchip TC1550TG-G Datasheet
Download the complete datasheet for Microchip TC1550TG-G to view detailed technical specifications.
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