Dual-channel N-channel and P-channel power MOSFET with 500V drain-to-source breakdown voltage and 60 Ohm Rds(on) max. Features 16A continuous drain current, 10ns turn-on delay, and 10ns fall time. Surface mountable in a SOIC package, operating from -55°C to 150°C.
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Microchip TC1550TG-G technical specifications.
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 16A |
| Drain to Source Breakdown Voltage | 500V |
| Drain to Source Resistance | 125R |
| Drain to Source Voltage (Vdss) | 500V |
| Fall Time | 10ns |
| FET Type | N and P-Channel |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1.65mm |
| Input Capacitance | 55pF |
| Length | 4.9mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Mount | Surface Mount |
| Number of Channels | 2 |
| Package Quantity | 3300 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL, N-CHANNEL |
| Rds On Max | 60R |
| Turn-Off Delay Time | 15ns |
| Turn-On Delay Time | 10ns |
| Weight | 0.002998oz |
| Width | 3.9mm |
| RoHS | Compliant |
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