Dual N-channel and P-channel MOSFET for power applications. Features 200V drain-to-source breakdown voltage and 7Ω Rds(on) at 200V. Offers a continuous drain current of 5.2A with fast switching speeds, including 10ns turn-on delay and 15ns fall time. Packaged in a compact DFN surface-mount format, operating across a wide temperature range of -55°C to 150°C.
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Microchip TC6320K6-G technical specifications.
| Package/Case | DFN |
| Continuous Drain Current (ID) | 5.2A |
| Drain to Source Breakdown Voltage | 200V |
| Drain to Source Resistance | 8R |
| Drain to Source Voltage (Vdss) | 200V |
| Fall Time | 15ns |
| FET Type | N and P-Channel |
| Height | 1.37mm |
| Input Capacitance | 110pF |
| Length | 4.89mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Mount | Surface Mount |
| Number of Channels | 2 |
| Number of Elements | 2 |
| Package Quantity | 3300 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL, N-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 7R |
| Turn-Off Delay Time | 20ns |
| Turn-On Delay Time | 10ns |
| Weight | 0.001319oz |
| Width | 3.91mm |
| RoHS | Compliant |
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