Dual N-channel and P-channel MOSFET for power applications. Features 200V drain-to-source breakdown voltage and 7Ω Rds(on) at 200V. Offers a continuous drain current of 5.2A with fast switching speeds, including 10ns turn-on delay and 15ns fall time. Packaged in a compact DFN surface-mount format, operating across a wide temperature range of -55°C to 150°C.
PackageDFN
MountingSurface Mount
PolarityP-CHANNEL, N-CHANNEL
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Technical Specifications
Microchip TC6320K6-G technical specifications.
General
Package/Case
DFN
Continuous Drain Current (ID)
5.2A
Drain to Source Breakdown Voltage
200V
Drain to Source Resistance
8R
Drain to Source Voltage (Vdss)
200V
Fall Time
15ns
FET Type
N and P-Channel
Height
1.37mm
Input Capacitance
110pF
Length
4.89mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Mount
Surface Mount
Number of Channels
2
Number of Elements
2
Package Quantity
3300
Packaging
Tape and Reel
Polarity
P-CHANNEL, N-CHANNEL
Radiation Hardening
No
Rds On Max
7R
Turn-Off Delay Time
20ns
Turn-On Delay Time
10ns
Weight
0.001319oz
Width
3.91mm
Compliance
RoHS
Compliant
Datasheet
Microchip TC6320K6-G Datasheet
Download the complete datasheet for Microchip TC6320K6-G to view detailed technical specifications.
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