
Dual N-channel and P-channel MOSFET for power applications. Features 200V drain-to-source breakdown voltage and 7Ω Rds(on) at 200V. Offers a continuous drain current of 5.2A with fast switching speeds, including 10ns turn-on delay and 15ns fall time. Packaged in a compact DFN surface-mount format, operating across a wide temperature range of -55°C to 150°C.
Microchip TC6320K6-G technical specifications.
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