N-channel enhancement mode MOSFET, TO-92 package, 40V drain-source breakdown voltage, 450mA continuous drain current, and 1.8 Ohm maximum drain-source on-resistance. Features 3ns turn-on delay, 6ns turn-off delay, and 5ns fall time, with 70pF input capacitance. Operates from -55°C to 150°C with 1W maximum power dissipation. Through-hole mounting, RoHS compliant.
PackageTO-92
MountingThrough Hole
PolarityN-CHANNEL
Power1W
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Technical Specifications
Microchip TN0104N3-G technical specifications.
General
Package/Case
TO-92
Continuous Drain Current (ID)
450mA
Drain to Source Breakdown Voltage
40V
Drain to Source Resistance
1.8R
Fall Time
5ns
Gate to Source Voltage (Vgs)
20V
Height
5.33mm
Input Capacitance
70pF
Length
5.21mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
1W
Mount
Through Hole
Number of Channels
1
Number of Elements
1
Package Quantity
1000
Packaging
Bulk
Polarity
N-CHANNEL
Power Dissipation
1W
Radiation Hardening
No
Rds On Max
1.8R
RoHS Compliant
Yes
Turn-Off Delay Time
6ns
Turn-On Delay Time
3ns
Weight
0.00776oz
Width
4.19mm
Compliance
RoHS
Compliant
Datasheet
Microchip TN0104N3-G Datasheet
Download the complete datasheet for Microchip TN0104N3-G to view detailed technical specifications.
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