N-channel enhancement mode MOSFET, TO-92 package, 40V drain-source breakdown voltage, 450mA continuous drain current, and 1.8 Ohm maximum drain-source on-resistance. Features 3ns turn-on delay, 6ns turn-off delay, and 5ns fall time, with 70pF input capacitance. Operates from -55°C to 150°C with 1W maximum power dissipation. Through-hole mounting, RoHS compliant.
PackageTO-92
MountingThrough Hole
PolarityN-CHANNEL
Power1W
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Technical Specifications
Microchip TN0104N3-G technical specifications.
General
| Package/Case | TO-92 |
| Continuous Drain Current (ID) | 450mA |
| Drain to Source Breakdown Voltage | 40V |
| Drain to Source Resistance | 1.8R |
| Fall Time | 5ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 5.33mm |
| Input Capacitance | 70pF |
| Length | 5.21mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1W |
| Mount | Through Hole |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Package Quantity | 1000 |
| Packaging | Bulk |
| Polarity | N-CHANNEL |
| Power Dissipation | 1W |
| Radiation Hardening | No |
| Rds On Max | 1.8R |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 6ns |
| Turn-On Delay Time | 3ns |
| Weight | 0.00776oz |
| Width | 4.19mm |
Compliance
| RoHS | Compliant |
Datasheet
Microchip TN0104N3-G Datasheet
Download the complete datasheet for Microchip TN0104N3-G to view detailed technical specifications.
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