N-channel JFET for small signal applications, featuring a 630mA continuous drain current and 40V drain-to-source breakdown voltage. This surface-mount component, housed in a SOT-89 package, offers a low 2 Ohm drain-to-source resistance and fast switching times with turn-on delay of 3ns and fall time of 7ns. It operates across a wide temperature range of -55°C to 150°C with a maximum power dissipation of 1.6W.
PackageSOT-89
MountingSurface Mount
PolarityN-CHANNEL
Power1.6W
Quick Jump:
Technical Specifications
Microchip TN0104N8-G technical specifications.
General
Package/Case
SOT-89
Continuous Drain Current (ID)
630mA
Drain to Source Breakdown Voltage
40V
Drain to Source Resistance
2R
Fall Time
7ns
Gate to Source Voltage (Vgs)
20V
Height
1.6mm
Input Capacitance
70pF
Length
4.6mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
1.6W
Mount
Surface Mount
Number of Channels
1
Number of Elements
1
Package Quantity
2000
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
1.6W
Radiation Hardening
No
Rds On Max
2R
Turn-Off Delay Time
6ns
Turn-On Delay Time
3ns
Weight
0.001862oz
Width
2.6mm
Compliance
RoHS
Compliant
Datasheet
Microchip TN0104N8-G Datasheet
Download the complete datasheet for Microchip TN0104N8-G to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.