N-channel small signal MOSFET in a TO-92 package, featuring a 40V drain-to-source breakdown voltage and 700mA continuous drain current. This through-hole mounted component offers a low 750mΩ drain-to-source resistance (Rds On Max) and fast switching times with a 10ns turn-on delay and 20ns fall time. Operating across a wide temperature range of -55°C to 150°C, it has a maximum power dissipation of 740mW and an input capacitance of 190pF.
PackageTO-92
MountingThrough Hole
PolarityN-CHANNEL
Power740mW
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Technical Specifications
Microchip TN0604N3-G technical specifications.
General
Package/Case
TO-92
Continuous Drain Current (ID)
700mA
Drain to Source Breakdown Voltage
40V
Drain to Source Resistance
750mR
Fall Time
20ns
Gate to Source Voltage (Vgs)
20V
Height
5.33mm
Input Capacitance
190pF
Length
5.21mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
740mW
Mount
Through Hole
Number of Channels
1
Number of Elements
1
Package Quantity
1000
Packaging
Bulk
Polarity
N-CHANNEL
Power Dissipation
740mW
Radiation Hardening
No
Rds On Max
750mR
Turn-Off Delay Time
25ns
Turn-On Delay Time
10ns
Weight
0.016oz
Width
4.19mm
Compliance
RoHS
Compliant
Datasheet
Microchip TN0604N3-G Datasheet
Download the complete datasheet for Microchip TN0604N3-G to view detailed technical specifications.
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