N-channel JFET with 500mA continuous drain current and 60V drain-to-source breakdown voltage. Features 1.5Ω drain-to-source resistance and 150pF input capacitance. Operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 1W. Packaged in TO-92 for through-hole mounting.
PackageTO-92
MountingThrough Hole
PolarityN-CHANNEL
Power1W
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Technical Specifications
Microchip TN0606N3-G technical specifications.
General
Package/Case
TO-92
Continuous Drain Current (ID)
500mA
Drain to Source Breakdown Voltage
60V
Drain to Source Resistance
1.5R
Fall Time
16ns
Gate to Source Voltage (Vgs)
20V
Height
5.33mm
Input Capacitance
150pF
Length
5.21mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
1W
Mount
Through Hole
Number of Channels
1
Number of Elements
1
Package Quantity
1000
Packaging
Bulk
Polarity
N-CHANNEL
Power Dissipation
1W
Radiation Hardening
No
Rds On Max
1.5R
Turn-Off Delay Time
16ns
Turn-On Delay Time
6ns
Weight
0.016oz
Width
4.19mm
Compliance
RoHS
Compliant
Datasheet
Microchip TN0606N3-G Datasheet
Download the complete datasheet for Microchip TN0606N3-G to view detailed technical specifications.
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