N-channel small signal MOSFET in a TO-236-3 surface mount package. Features 240V drain-to-source breakdown voltage and 134mA continuous drain current. Offers 15Ω drain-to-source resistance, 50pF input capacitance, and fast switching times with 4ns turn-on delay and 2ns fall time. Operates from -55°C to 150°C with a maximum power dissipation of 360mW.
PackageTO-236-3
MountingSurface Mount
PolarityN-CHANNEL
Power360mW
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Technical Specifications
Microchip TN2124K1-G technical specifications.
General
Package/Case
TO-236-3
Continuous Drain Current (ID)
134mA
Drain to Source Breakdown Voltage
240V
Drain to Source Resistance
15R
Fall Time
2ns
Gate to Source Voltage (Vgs)
20V
Height
0.95mm
Input Capacitance
50pF
Length
2.9mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
360mW
Mount
Surface Mount
Number of Channels
1
Number of Elements
1
Package Quantity
3000
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
360mW
Rds On Max
15R
RoHS Compliant
Yes
Turn-Off Delay Time
7ns
Turn-On Delay Time
4ns
Weight
0.050717oz
Width
1.3mm
Compliance
RoHS
Compliant
Datasheet
Microchip TN2124K1-G Datasheet
Download the complete datasheet for Microchip TN2124K1-G to view detailed technical specifications.
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