N-channel, small signal JFET with 250V drain-to-source breakdown voltage and 150mA continuous drain current. Features 7Ω drain-to-source resistance, 110pF input capacitance, and 20V gate-to-source voltage. Operates across a -55°C to 150°C temperature range with 360mW maximum power dissipation. Surface mountable in a SOT-23-3 package, this lead-free and RoHS compliant component offers fast switching with fall time of 15ns and turn-on/off delays of 20ns and 25ns respectively.
PackageSOT-23-3
MountingSurface Mount
PolarityN-CHANNEL
Power360mW
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Technical Specifications
Microchip TN5325K1-G technical specifications.
General
Package/Case
SOT-23-3
Continuous Drain Current (ID)
150mA
Drain to Source Breakdown Voltage
250V
Drain to Source Resistance
7R
Fall Time
15ns
Gate to Source Voltage (Vgs)
20V
Height
0.95mm
Input Capacitance
110pF
Lead Free
Lead Free
Length
2.9mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
360mW
Mount
Surface Mount
Number of Channels
1
Package Quantity
3000
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
360mW
Rds On Max
7R
RoHS Compliant
Yes
Turn-Off Delay Time
25ns
Turn-On Delay Time
20ns
Weight
0.050717oz
Width
1.3mm
Compliance
RoHS
Compliant
Datasheet
Microchip TN5325K1-G Datasheet
Download the complete datasheet for Microchip TN5325K1-G to view detailed technical specifications.
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