N-channel, small signal JFET with 250V drain-to-source breakdown voltage and 150mA continuous drain current. Features 7Ω drain-to-source resistance, 110pF input capacitance, and 20V gate-to-source voltage. Operates across a -55°C to 150°C temperature range with 360mW maximum power dissipation. Surface mountable in a SOT-23-3 package, this lead-free and RoHS compliant component offers fast switching with fall time of 15ns and turn-on/off delays of 20ns and 25ns respectively.
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Microchip TN5325K1-G technical specifications.
| Package/Case | SOT-23-3 |
| Continuous Drain Current (ID) | 150mA |
| Drain to Source Breakdown Voltage | 250V |
| Drain to Source Resistance | 7R |
| Fall Time | 15ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 0.95mm |
| Input Capacitance | 110pF |
| Lead Free | Lead Free |
| Length | 2.9mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 360mW |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 360mW |
| Rds On Max | 7R |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 25ns |
| Turn-On Delay Time | 20ns |
| Weight | 0.050717oz |
| Width | 1.3mm |
| RoHS | Compliant |
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