The TN5325N8-G is a surface mount N-channel MOSFET with a maximum operating temperature range of -55°C to 150°C. It has a drain to source breakdown voltage of 250V and a continuous drain current of 316mA. The device has a drain to source resistance of 7 ohms and a maximum power dissipation of 1.6W. The SOT-89-3 package has dimensions of 1.6mm height, 2.6mm width, and 4.6mm length.
PackageSOT-89-3
MountingSurface Mount
PolarityN-CHANNEL
Power1.6W
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Technical Specifications
Microchip TN5325N8-G technical specifications.
General
| Package/Case | SOT-89-3 |
| Continuous Drain Current (ID) | 316mA |
| Drain to Source Breakdown Voltage | 250V |
| Drain to Source Resistance | 7R |
| Fall Time | 15ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1.6mm |
| Length | 4.6mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.6W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Package Quantity | 2000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 1.6W |
| Turn-Off Delay Time | 25ns |
| Turn-On Delay Time | 20ns |
| Weight | 0.001862oz |
| Width | 2.6mm |
Compliance
| RoHS | Compliant |
Datasheet
Microchip TN5325N8-G Datasheet
Download the complete datasheet for Microchip TN5325N8-G to view detailed technical specifications.
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