The TN5335K1-G is a single N-channel JFET with a maximum drain to source breakdown voltage of 350V and a continuous drain current of 110mA. It features a drain to source resistance of 15 ohms and an input capacitance of 110 picofarads. The device is packaged in a surface mount SOT-23-3 package and is rated for operation over a temperature range of -55°C to 150°C. The TN5335K1-G is suitable for use in a variety of applications including general purpose switching and amplification.
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| Package/Case | SOT-23-3 |
| Continuous Drain Current (ID) | 110mA |
| Drain to Source Breakdown Voltage | 350V |
| Drain to Source Resistance | 15R |
| Fall Time | 15ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 0.95mm |
| Input Capacitance | 110pF |
| Length | 2.9mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 360mW |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 360mW |
| Rds On Max | 15R |
| Turn-Off Delay Time | 25ns |
| Turn-On Delay Time | 20ns |
| Weight | 0.050717oz |
| Width | 1.3mm |
| RoHS | Compliant |
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