
P-channel JFET designed for small signal applications. Features a continuous drain current of 320mA and a drain-to-source breakdown voltage of -60V. Offers a low on-resistance of 3.5 Ohms and a maximum power dissipation of 1W. Packaged in a TO-92 through-hole mount with a typical operating temperature range of -55°C to 150°C. Includes fast switching characteristics with turn-on delay time of 10ns and fall time of 15ns.
Microchip TP0606N3-G technical specifications.
| Package/Case | TO-92 |
| Continuous Drain Current (ID) | 320mA |
| Drain to Source Breakdown Voltage | -60V |
| Drain to Source Resistance | 3.5R |
| Drain to Source Voltage (Vdss) | 60V |
| Fall Time | 15ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 5.33mm |
| Input Capacitance | 150pF |
| Length | 5.21mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1W |
| Mount | Through Hole |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Package Quantity | 1000 |
| Packaging | Bulk |
| Polarity | P-CHANNEL |
| Power Dissipation | 1W |
| Radiation Hardening | No |
| Rds On Max | 3.5R |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 20ns |
| Turn-On Delay Time | 10ns |
| Weight | 0.016oz |
| Width | 4.19mm |
| RoHS | Compliant |
Download the complete datasheet for Microchip TP0606N3-G to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.