P-Channel MOSFET, 60V Drain-Source Breakdown Voltage, 120mA Continuous Drain Current, 10 Ohm Rds On Max. Features 10ns Turn-On Delay, 15ns Fall Time, and 60pF Input Capacitance. Surface mountable in a 3-Pin SOT-23 package, operating from -55°C to 150°C with 360mW Max Power Dissipation. Packaged in Tape and Reel for automated assembly.
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Microchip TP0610T-G technical specifications.
| Package/Case | SOT-23 |
| Continuous Drain Current (ID) | 120mA |
| Drain to Source Breakdown Voltage | -60V |
| Drain to Source Resistance | 10R |
| Drain to Source Voltage (Vdss) | 60V |
| Fall Time | 15ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 0.93mm |
| Input Capacitance | 60pF |
| Length | 2.92mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 360mW |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 360mW |
| Radiation Hardening | No |
| Rds On Max | 10R |
| Turn-Off Delay Time | 15ns |
| Turn-On Delay Time | 10ns |
| Weight | 0.050717oz |
| Width | 1.3mm |
| RoHS | Compliant |
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