P-Channel MOSFET, 60V Drain-Source Breakdown Voltage, 120mA Continuous Drain Current, 10 Ohm Rds On Max. Features 10ns Turn-On Delay, 15ns Fall Time, and 60pF Input Capacitance. Surface mountable in a 3-Pin SOT-23 package, operating from -55°C to 150°C with 360mW Max Power Dissipation. Packaged in Tape and Reel for automated assembly.
PackageSOT-23
MountingSurface Mount
PolarityP-CHANNEL
Power360mW
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Technical Specifications
Microchip TP0610T-G technical specifications.
General
Package/Case
SOT-23
Continuous Drain Current (ID)
120mA
Drain to Source Breakdown Voltage
-60V
Drain to Source Resistance
10R
Drain to Source Voltage (Vdss)
60V
Fall Time
15ns
Gate to Source Voltage (Vgs)
20V
Height
0.93mm
Input Capacitance
60pF
Length
2.92mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
360mW
Mount
Surface Mount
Number of Channels
1
Number of Elements
1
Package Quantity
3000
Packaging
Tape and Reel
Polarity
P-CHANNEL
Power Dissipation
360mW
Radiation Hardening
No
Rds On Max
10R
Turn-Off Delay Time
15ns
Turn-On Delay Time
10ns
Weight
0.050717oz
Width
1.3mm
Compliance
RoHS
Compliant
Datasheet
Microchip TP0610T-G Datasheet
Download the complete datasheet for Microchip TP0610T-G to view detailed technical specifications.
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