MICROCHIP

TP0610T-G

Datasheet

P-CH MOSFET, 60V, 120mA, SOT-23, 10R RdsOn

Microchip

TP0610T-G

Name: TP0610T-G Microchip
Brand: Microchip
SKU: TP0610T-G

P-CH MOSFET, 60V, 120mA, SOT-23, 10R RdsOn

P-Channel MOSFET, 60V Drain-Source Breakdown Voltage, 120mA Continuous Drain Current, 10 Ohm Rds On Max. Features 10ns Turn-On Delay, 15ns Fall Time, and 60pF Input Capacitance. Surface mountable in a 3-Pin SOT-23 package, operating from -55°C to 150°C with 360mW Max Power Dissipation. Packaged in Tape and Reel for automated assembly.

PackageSOT-23

MountingSurface Mount

PolarityP-CHANNEL

Power360mW

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Technical Specifications

Microchip TP0610T-G technical specifications.

General

Package/Case	SOT-23
Continuous Drain Current (ID)	120mA
Drain to Source Breakdown Voltage	-60V
Drain to Source Resistance	10R
Drain to Source Voltage (Vdss)	60V
Fall Time	15ns
Gate to Source Voltage (Vgs)	20V
Height	0.93mm
Input Capacitance	60pF
Length	2.92mm
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Max Power Dissipation	360mW
Mount	Surface Mount
Number of Channels	1
Number of Elements	1
Package Quantity	3000
Packaging	Tape and Reel
Polarity	P-CHANNEL
Power Dissipation	360mW
Radiation Hardening	No
Rds On Max	10R
Turn-Off Delay Time	15ns
Turn-On Delay Time	10ns
Weight	0.050717oz
Width	1.3mm