
P-Channel MOSFET, 60V Drain-Source Breakdown Voltage, 120mA Continuous Drain Current, 10 Ohm Rds On Max. Features 10ns Turn-On Delay, 15ns Fall Time, and 60pF Input Capacitance. Surface mountable in a 3-Pin SOT-23 package, operating from -55°C to 150°C with 360mW Max Power Dissipation. Packaged in Tape and Reel for automated assembly.
Microchip TP0610T-G technical specifications.
Download the complete datasheet for Microchip TP0610T-G to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
