
P-CHANNEL, small signal MOSFET in a SOT-23-3 package. Features 160mA continuous drain current and -40V drain-to-source breakdown voltage. Offers 6 Ohms drain-to-source resistance and 60pF input capacitance. Operates from -55°C to 150°C with 360mW power dissipation. Surface mountable with 4ns turn-on delay and 5ns turn-off delay. RoHS compliant.
Microchip TP2104K1-G technical specifications.
| Package/Case | SOT-23-3 |
| Continuous Drain Current (ID) | 160mA |
| Drain to Source Breakdown Voltage | -40V |
| Drain to Source Resistance | 6R |
| Drain to Source Voltage (Vdss) | -40V |
| Fall Time | 4ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 0.95mm |
| Input Capacitance | 60pF |
| Length | 2.9mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 360mW |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 360mW |
| Radiation Hardening | No |
| Rds On Max | 6R |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 5ns |
| Turn-On Delay Time | 4ns |
| Weight | 0.050717oz |
| Width | 1.3mm |
| RoHS | Compliant |
Download the complete datasheet for Microchip TP2104K1-G to view detailed technical specifications.
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