P-channel MOSFET with 100V drain-source breakdown voltage and 480mA continuous drain current. Features 3.5 Ohm drain-source resistance (Rds On Max) and 20V gate-source voltage. Surface mountable in a 4-pin SOT-89 (TO-243AA) package, this component offers fast switching with turn-on delay of 10ns and fall time of 15ns. Maximum power dissipation is 1.6W, operating between -55°C and 150°C.
PackageTO-243AA
MountingSurface Mount
PolarityP-CHANNEL
Power1.6W
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Technical Specifications
Microchip TP2510N8-G technical specifications.
General
Package/Case
TO-243AA
Continuous Drain Current (ID)
480mA
Drain to Source Breakdown Voltage
-100V
Drain to Source Resistance
3.5R
Drain to Source Voltage (Vdss)
100V
Fall Time
15ns
Gate to Source Voltage (Vgs)
20V
Height
1.6mm
Input Capacitance
125pF
Lead Free
Lead Free
Length
4.6mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
1.6W
Mount
Surface Mount
Number of Channels
1
Number of Elements
1
Package Quantity
2000
Packaging
Tape and Reel
Polarity
P-CHANNEL
Power Dissipation
1.6W
Radiation Hardening
No
Rds On Max
3.5R
Turn-Off Delay Time
20ns
Turn-On Delay Time
10ns
Weight
0.001862oz
Width
2.6mm
Compliance
RoHS
Compliant
Datasheet
Microchip TP2510N8-G Datasheet
Download the complete datasheet for Microchip TP2510N8-G to view detailed technical specifications.
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