P-channel MOSFET with 100V drain-source breakdown voltage and 480mA continuous drain current. Features 3.5 Ohm drain-source resistance (Rds On Max) and 20V gate-source voltage. Surface mountable in a 4-pin SOT-89 (TO-243AA) package, this component offers fast switching with turn-on delay of 10ns and fall time of 15ns. Maximum power dissipation is 1.6W, operating between -55°C and 150°C.
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Microchip TP2510N8-G technical specifications.
| Package/Case | TO-243AA |
| Continuous Drain Current (ID) | 480mA |
| Drain to Source Breakdown Voltage | -100V |
| Drain to Source Resistance | 3.5R |
| Drain to Source Voltage (Vdss) | 100V |
| Fall Time | 15ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1.6mm |
| Input Capacitance | 125pF |
| Lead Free | Lead Free |
| Length | 4.6mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.6W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Package Quantity | 2000 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 1.6W |
| Radiation Hardening | No |
| Rds On Max | 3.5R |
| Turn-Off Delay Time | 20ns |
| Turn-On Delay Time | 10ns |
| Weight | 0.001862oz |
| Width | 2.6mm |
| RoHS | Compliant |
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