P-channel power MOSFET, TO-243AA package, offering -200V drain-source breakdown voltage and 12 Ohm drain-source resistance. Features 260mA continuous drain current, 1.6W power dissipation, and operates from -55°C to 150°C. Surface mount design with fast switching times, including 10ns turn-on delay and 15ns fall time.
PackageSOT-89
MountingSurface Mount
PolarityP-CHANNEL
Power1.6W
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Technical Specifications
Microchip TP2520N8-G technical specifications.
General
Package/Case
SOT-89
Continuous Drain Current (ID)
260mA
Drain to Source Breakdown Voltage
-200V
Drain to Source Resistance
12R
Drain to Source Voltage (Vdss)
-200V
Fall Time
15ns
Gate to Source Voltage (Vgs)
20V
Height
1.6mm
Lead Free
Lead Free
Length
4.6mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
1.6W
Mount
Surface Mount
Number of Channels
1
Number of Elements
1
Package Quantity
2000
Packaging
Tape and Reel
Polarity
P-CHANNEL
Power Dissipation
1.6W
Radiation Hardening
No
Turn-Off Delay Time
20ns
Turn-On Delay Time
10ns
Weight
0.001862oz
Width
2.6mm
Compliance
RoHS
Compliant
Datasheet
Microchip TP2520N8-G Datasheet
Download the complete datasheet for Microchip TP2520N8-G to view detailed technical specifications.
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