P-channel power MOSFET, TO-243AA package, designed for surface mount applications. Features a continuous drain current of 260mA and a drain-to-source breakdown voltage of -220V. Offers a low on-resistance of 12 ohms and a maximum power dissipation of 1.6W. Operates across a wide temperature range from -55°C to 150°C, with switching times including a 10ns turn-on delay and 15ns fall time.
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Microchip TP2522N8-G technical specifications.
| Package/Case | TO-243AA |
| Continuous Drain Current (ID) | 260mA |
| Drain to Source Breakdown Voltage | -220V |
| Drain to Source Resistance | 12R |
| Drain to Source Voltage (Vdss) | 220V |
| Fall Time | 15ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1.6mm |
| Input Capacitance | 125pF |
| Length | 4.6mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.6W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Package Quantity | 2000 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 1.6W |
| Rds On Max | 12R |
| Resistance | 12R |
| Turn-Off Delay Time | 20ns |
| Turn-On Delay Time | 10ns |
| Weight | 0.001862oz |
| Width | 2.6mm |
| RoHS | Compliant |
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