P-channel small signal MOSFET in a TO-92 package, featuring a continuous drain current of 86mA and a drain-to-source breakdown voltage of -400V. This through-hole component offers a maximum power dissipation of 740mW and a drain-to-source resistance (Rds On) of 25 Ohms. With a gate-to-source voltage rating of 20V, it exhibits a fall time of 10ns and a turn-on delay time of 10ns. Operating temperature range spans from -55°C to 150°C.
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Microchip TP2540N3-G technical specifications.
| Package/Case | TO-92 |
| Continuous Drain Current (ID) | 86mA |
| Drain to Source Breakdown Voltage | -400V |
| Drain to Source Resistance | 25R |
| Drain to Source Voltage (Vdss) | 400V |
| Fall Time | 10ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 5.33mm |
| Input Capacitance | 125pF |
| Length | 5.21mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 740mW |
| Mount | Through Hole |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Package Quantity | 1000 |
| Packaging | Bulk |
| Polarity | P-CHANNEL |
| Power Dissipation | 740mW |
| Radiation Hardening | No |
| Rds On Max | 25R |
| Turn-Off Delay Time | 20ns |
| Turn-On Delay Time | 10ns |
| Weight | 0.016oz |
| Width | 4.19mm |
| RoHS | Compliant |
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