The TP2540N3-G-P002 is a P-channel MOSFET with a drain to source breakdown voltage of 400V and a continuous drain current of 86mA. It features a maximum power dissipation of 740mW and a maximum operating temperature of 150°C. The device is packaged in a TO-92-3 package and is suitable for through hole mounting. It has an input capacitance of 125pF and a gate to source voltage of 20V.
PackageTO-92-3
MountingThrough Hole
PolarityP-CHANNEL
Power740mW
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Technical Specifications
Microchip TP2540N3-G-P002 technical specifications.
General
| Package/Case | TO-92-3 |
| Continuous Drain Current (ID) | 86mA |
| Drain to Source Breakdown Voltage | -400V |
| Drain to Source Resistance | 30R |
| Drain to Source Voltage (Vdss) | 400V |
| Fall Time | 13ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 125pF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 740mW |
| Mount | Through Hole |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Package Quantity | 2000 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 740mW |
| Rds On Max | 25R |
| Turn-Off Delay Time | 20ns |
| Turn-On Delay Time | 10ns |
| Weight | 0.016oz |
Compliance
| RoHS | Compliant |
Datasheet
Microchip TP2540N3-G-P002 Datasheet
Download the complete datasheet for Microchip TP2540N3-G-P002 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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