
P-CHANNEL, small signal MOSFET with a continuous drain current of 86mA and a drain-to-source breakdown voltage of -400V. Features a low drain-to-source resistance of 15 Ohms, a gate-to-source voltage of 20V, and a maximum power dissipation of 740mW. This surface mount component, housed in an SOIC package, offers fast switching with turn-on delay times of 10ns and fall times of 15ns. Operating across a wide temperature range from -55°C to 150°C, it is supplied in tape and reel packaging.
Microchip TP2640LG-G technical specifications.
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 86mA |
| Drain to Source Breakdown Voltage | -400V |
| Drain to Source Resistance | 15R |
| Drain to Source Voltage (Vdss) | 400V |
| Fall Time | 15ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1.65mm |
| Input Capacitance | 300pF |
| Length | 4.9mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 740mW |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Package Quantity | 3300 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 1.3W |
| Rds On Max | 15R |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 60ns |
| Turn-On Delay Time | 10ns |
| Weight | 0.002998oz |
| Width | 3.9mm |
| RoHS | Compliant |
Download the complete datasheet for Microchip TP2640LG-G to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
