P-CHANNEL, small signal MOSFET with a continuous drain current of 86mA and a drain-to-source breakdown voltage of -400V. Features a low drain-to-source resistance of 15 Ohms, a gate-to-source voltage of 20V, and a maximum power dissipation of 740mW. This surface mount component, housed in an SOIC package, offers fast switching with turn-on delay times of 10ns and fall times of 15ns. Operating across a wide temperature range from -55°C to 150°C, it is supplied in tape and reel packaging.
PackageSOIC
MountingSurface Mount
PolarityP-CHANNEL
Power1.3W
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Technical Specifications
Microchip TP2640LG-G technical specifications.
General
Package/Case
SOIC
Continuous Drain Current (ID)
86mA
Drain to Source Breakdown Voltage
-400V
Drain to Source Resistance
15R
Drain to Source Voltage (Vdss)
400V
Fall Time
15ns
Gate to Source Voltage (Vgs)
20V
Height
1.65mm
Input Capacitance
300pF
Length
4.9mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
740mW
Mount
Surface Mount
Number of Channels
1
Package Quantity
3300
Packaging
Tape and Reel
Polarity
P-CHANNEL
Power Dissipation
1.3W
Rds On Max
15R
RoHS Compliant
Yes
Turn-Off Delay Time
60ns
Turn-On Delay Time
10ns
Weight
0.002998oz
Width
3.9mm
Compliance
RoHS
Compliant
Datasheet
Microchip TP2640LG-G Datasheet
Download the complete datasheet for Microchip TP2640LG-G to view detailed technical specifications.
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