TP5322N8-G

P-channel power MOSFET in TO-243AA surface mount package. Features 220V drain-to-source breakdown voltage, 260mA continuous drain current, and 12 Ohm drain-to-source resistance (Rds On Max). Operates across a -55°C to 150°C temperature range with a maximum power dissipation of 1.6W. Includes 10ns turn-on delay, 20ns turn-off delay, and 15ns fall time. Input capacitance is 110pF, with a 20V gate-to-source voltage rating.