P-CHANNEL, Si, SMALL SIGNAL MOSFET, TO-236AB package. Features 85mA continuous drain current and -350V drain to source breakdown voltage. Offers 30 Ohms drain to source resistance (Rds On Max) and 110pF input capacitance. Operates within a -55°C to 150°C temperature range with 360mW power dissipation. Surface mount component with 15ns fall time and 20ns turn-on delay.
PackageTO-236-3
MountingSurface Mount
PolarityP-CHANNEL
Power360mW
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Technical Specifications
Microchip TP5335K1-G technical specifications.
General
| Package/Case | TO-236-3 |
| Continuous Drain Current (ID) | 85mA |
| Drain to Source Breakdown Voltage | -350V |
| Drain to Source Resistance | 30R |
| Drain to Source Voltage (Vdss) | 350V |
| Fall Time | 15ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 110pF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 360mW |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 360mW |
| Rds On Max | 30R |
| Turn-Off Delay Time | 25ns |
| Turn-On Delay Time | 20ns |
| Weight | 0.050717oz |
Compliance
| RoHS | Compliant |
Datasheet
Microchip TP5335K1-G Datasheet
Download the complete datasheet for Microchip TP5335K1-G to view detailed technical specifications.
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