P-CHANNEL, Si, SMALL SIGNAL MOSFET, TO-236AB package. Features 85mA continuous drain current and -350V drain to source breakdown voltage. Offers 30 Ohms drain to source resistance (Rds On Max) and 110pF input capacitance. Operates within a -55°C to 150°C temperature range with 360mW power dissipation. Surface mount component with 15ns fall time and 20ns turn-on delay.
PackageTO-236-3
MountingSurface Mount
PolarityP-CHANNEL
Power360mW
Quick Jump:
Technical Specifications
Microchip TP5335K1-G technical specifications.
General
Package/Case
TO-236-3
Continuous Drain Current (ID)
85mA
Drain to Source Breakdown Voltage
-350V
Drain to Source Resistance
30R
Drain to Source Voltage (Vdss)
350V
Fall Time
15ns
Gate to Source Voltage (Vgs)
20V
Input Capacitance
110pF
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
360mW
Mount
Surface Mount
Number of Channels
1
Number of Elements
1
Package Quantity
3000
Packaging
Tape and Reel
Polarity
P-CHANNEL
Power Dissipation
360mW
Rds On Max
30R
Turn-Off Delay Time
25ns
Turn-On Delay Time
20ns
Weight
0.050717oz
Compliance
RoHS
Compliant
Datasheet
Microchip TP5335K1-G Datasheet
Download the complete datasheet for Microchip TP5335K1-G to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.