
N-channel small signal JFET in a TO-92 package, featuring a 60V drain-to-source breakdown voltage and 350mA continuous drain current. Offers a low 3 Ohm drain-to-source resistance and fast switching speeds with turn-on delay of 3ns and fall time of 5ns. Operates across a wide temperature range from -55°C to 150°C with a maximum power dissipation of 1W. Through-hole mounting and lead-free construction.
Microchip VN0106N3-G technical specifications.
| Package/Case | TO-92 |
| Continuous Drain Current (ID) | 350mA |
| Drain to Source Breakdown Voltage | 60V |
| Drain to Source Resistance | 3R |
| Fall Time | 5ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 5.33mm |
| Input Capacitance | 65pF |
| Lead Free | Lead Free |
| Length | 5.21mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1W |
| Mount | Through Hole |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Package Quantity | 1000 |
| Packaging | Bulk |
| Polarity | N-CHANNEL |
| Power Dissipation | 1W |
| Radiation Hardening | No |
| Rds On Max | 3R |
| Turn-Off Delay Time | 6ns |
| Turn-On Delay Time | 3ns |
| Weight | 0.016oz |
| Width | 4.19mm |
| RoHS | Compliant |
Download the complete datasheet for Microchip VN0106N3-G to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
