N-channel JFET with 500V drain-to-source breakdown voltage and 50mA continuous drain current. Features 60Ω drain-to-source resistance, 10ns fall time, and 10ns turn-on/off delay times. Operates within a -55°C to 150°C temperature range with 1W maximum power dissipation. Packaged in a TO-92 through-hole mount, this small signal MOSFET is supplied in bulk packaging.
PackageTO-92
MountingThrough Hole
PolarityN-CHANNEL
Power1W
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Technical Specifications
Microchip VN0550N3-G technical specifications.
General
Package/Case
TO-92
Continuous Drain Current (ID)
50mA
Drain to Source Breakdown Voltage
500V
Drain to Source Resistance
60R
Fall Time
10ns
Gate to Source Voltage (Vgs)
20V
Height
5.33mm
Input Capacitance
55pF
Length
5.21mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
1W
Mount
Through Hole
Number of Channels
1
Number of Elements
1
Package Quantity
1000
Packaging
Bulk
Polarity
N-CHANNEL
Power Dissipation
1W
Radiation Hardening
No
Rds On Max
60R
Turn-Off Delay Time
10ns
Turn-On Delay Time
10ns
Weight
0.016oz
Width
4.19mm
Compliance
RoHS
Compliant
Datasheet
Microchip VN0550N3-G Datasheet
Download the complete datasheet for Microchip VN0550N3-G to view detailed technical specifications.
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