N-channel JFET with 500V drain-to-source breakdown voltage and 50mA continuous drain current. Features 60Ω drain-to-source resistance, 10ns fall time, and 10ns turn-on/off delay times. Operates within a -55°C to 150°C temperature range with 1W maximum power dissipation. Packaged in a TO-92 through-hole mount, this small signal MOSFET is supplied in bulk packaging.
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Microchip VN0550N3-G technical specifications.
| Package/Case | TO-92 |
| Continuous Drain Current (ID) | 50mA |
| Drain to Source Breakdown Voltage | 500V |
| Drain to Source Resistance | 60R |
| Fall Time | 10ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 5.33mm |
| Input Capacitance | 55pF |
| Length | 5.21mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1W |
| Mount | Through Hole |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Package Quantity | 1000 |
| Packaging | Bulk |
| Polarity | N-CHANNEL |
| Power Dissipation | 1W |
| Radiation Hardening | No |
| Rds On Max | 60R |
| Turn-Off Delay Time | 10ns |
| Turn-On Delay Time | 10ns |
| Weight | 0.016oz |
| Width | 4.19mm |
| RoHS | Compliant |
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