MICROCHIP

VN10KN3-G

Datasheet

N-CH JFET, 60V, 310mA, 5R, TO-92, Through Hole

Microchip

VN10KN3-G

Name: VN10KN3-G Microchip
Brand: Microchip
SKU: VN10KN3-G

N-CH JFET, 60V, 310mA, 5R, TO-92, Through Hole

N-channel small signal MOSFET in a TO-92 package, featuring a continuous drain current of 310mA and a drain-to-source breakdown voltage of 60V. This through-hole component offers a low drain-to-source resistance of 5 Ohms and a gate-to-source voltage rating of 30V. With a maximum power dissipation of 1W and operating temperatures from -55°C to 150°C, it includes input capacitance of 60pF and turn-on/off delay times of 10ns.

PackageTO-92

MountingThrough Hole

PolarityN-CHANNEL

Power1W

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Technical Specifications

Microchip VN10KN3-G technical specifications.

General

Package/Case	TO-92
Continuous Drain Current (ID)	310mA
Drain to Source Breakdown Voltage	60V
Drain to Source Resistance	5R
Gate to Source Voltage (Vgs)	30V
Height	5.33mm
Input Capacitance	60pF
Length	5.21mm
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Max Power Dissipation	1W
Mount	Through Hole
Number of Channels	1
Number of Elements	1
Package Quantity	1000
Packaging	Bulk
Polarity	N-CHANNEL
Power Dissipation	1W
Radiation Hardening	No
Rds On Max	5R
RoHS Compliant	Yes
Turn-Off Delay Time	10ns
Turn-On Delay Time	10ns
Weight	0.00776oz
Width	4.19mm