N-channel small signal MOSFET in a TO-92 package, featuring a continuous drain current of 310mA and a drain-to-source breakdown voltage of 60V. This through-hole component offers a low drain-to-source resistance of 5 Ohms and a gate-to-source voltage rating of 30V. With a maximum power dissipation of 1W and operating temperatures from -55°C to 150°C, it includes input capacitance of 60pF and turn-on/off delay times of 10ns.
PackageTO-92
MountingThrough Hole
PolarityN-CHANNEL
Power1W
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Technical Specifications
Microchip VN10KN3-G technical specifications.
General
Package/Case
TO-92
Continuous Drain Current (ID)
310mA
Drain to Source Breakdown Voltage
60V
Drain to Source Resistance
5R
Gate to Source Voltage (Vgs)
30V
Height
5.33mm
Input Capacitance
60pF
Length
5.21mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
1W
Mount
Through Hole
Number of Channels
1
Number of Elements
1
Package Quantity
1000
Packaging
Bulk
Polarity
N-CHANNEL
Power Dissipation
1W
Radiation Hardening
No
Rds On Max
5R
RoHS Compliant
Yes
Turn-Off Delay Time
10ns
Turn-On Delay Time
10ns
Weight
0.00776oz
Width
4.19mm
Compliance
RoHS
Compliant
Datasheet
Microchip VN10KN3-G Datasheet
Download the complete datasheet for Microchip VN10KN3-G to view detailed technical specifications.
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